We believe that materials are at the basis of scientific progress: playgrounds for fundamental science and platforms for technological advancement. Our work concentrates on two-dimensional (2D) materials and their stacks, which yield unprecedent electronic, optical and magnetic properties offering viable solutions to this century’s challenges. The 2D Materials Engineering unit develops approaches to obtain 2D materials over large areas and with excellent quality. We investigate the fundamental properties of these materials with advanced characterization techniques and assess their most promising fields of applications. We nurture strong collaborations with research units and companies around the globe to develop novel energy efficient communications technologies, devise future quantum applications, and demonstrate high-performance sensing solutions for healthcare applications. We foresee machine learning (ML) as a strategic tool to develop novel synthetic and assembly solutions, and we plan to integrate 2D materials for lighter, energy efficient and large bandwidth communicating robotic elements, in circular economy, and for conservation of cultural heritage.

Our labs are equipped with state of the art tools for the growth and characterization of 2D materials. Growth Lab: 2 PE-CVD (BM, Aixtron) for graphene growth (on metals and insulators); 2 Furnaces (Lenton) for TMDs synthesis. Characterization Lab: Raman spectroscopy (InVia, Renishaw); atomic force microscopy (AFM+, Anasys); Hall measurement system (HMS-3000, Ecopia) and probe station for electrical measurements; 2D materials transfer setup; Low-temperature scanning tunneling microscopy (Scienta Omicron) equipped with UHV AFM and LEED. Access to NEST laboratories: ISO 7 cleanroom facility, scanning electron microscopes, transmission electron microscope, chemistry laboratory.

IIT

• Graphene Labs and sponsored by the EC under the  Graphene Flagship.

National and International

• A. Tredicucci (Italy)
• M. Romagnoli (Italy)
• U. Starke (MPI-Stuttgart, Germany)
• I. Gierz (MPI-Hamburg, Germany)
• J-H. Ahn (Yonsei University, South Korea)
• F. Koppens (ICFO, Spain)
• A. Ferrari (UCAM, UK)
• P. Bøggild (DTU, Denmark)
• K. Teo (AIXTRON Ltd)
• P. Galli (Nokia System Networks Italia)